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Get PDF - The prolific polytypism of silicon carbide

Ortiz, A L.; Sánchez-Bajo, F; Cumbrera, F L.; Guiberteau, F, 2013: The prolific polytypism of silicon carbide Influence of polytypism on therm

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Silicon carbide solution | Nature Chemistry

Comparing microwave-heated reactions in glass and silicon carbide vials suggests that heating effects alone are responsible for the benefits of

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Deák, P, Buruzs, A, Gali, A, Frauenheim, T Choyke, WJ 2006, Silicon carbide: A playground for ID-modulation electronics. in Materials Science

bias temperature instability (BTI) in silicon carbide

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

A silicon carbide room-temperature single-photon source —

Castelletto, S, Johnson, BC, Ivády, V, Stavrias, N, Umeda, T, Gali, A Ohshima, T 2014, A silicon carbide room-temperature single-photon

detection at room temperature (Article, 2018) [WorldCat.org]

Get this from a library! Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature. [ANIMMA 2017 5th International

Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell; D. J. Larkin, 1997: Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide Role of silicon dangling bonds in the elec

Irradiation-Induced Defects in Silicon Carbide | Springer

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N-channel Silicon Carbide Power MOSFET for Automotive_SCT3160

(2017) Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide.,

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localized corrosion of aluminumsilicon carbide composites

Z. Ahmad; P. T. Paulette; B. J. A. Aleem, 2000: Mechanism of localized corrosion of aluminumsilicon carbide composites in a chloride containing

controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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photon source at telecom range in cubic silicon carbide

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and Aluminum/Silicon Carbide Using Image Texture Features

Forming Temperature Investigation of Aluminum and Aluminum/Silicon Carbide Using Image Texture Features on ResearchGate, the professional network for scientis

N-channel Silicon Carbide Power MOSFET for Automotive_SCT3030

Rae Hyeong Ryu; Kee Sung Lee; Young-Wook Kim, 2009: Indentation and contact damages on grain boundary controlled silicon carbide ceramics Silicon infilt

photon source at telecom range in cubic silicon carbide

emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range.Bright room temperature single photon source at telecom range in cubic

Get PDF - Synthesis of beta silicon carbide powders from

Simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by slurry-sampling graphite furnace AAS

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